UM3015 1 p-ch 30v fast switching mosfets symbol parameter rating units v ds drain-source voltage -30 v v gs gate-sou u ce voltage f 20 3 v i d @t a =25 continuous drain current, v gs @ -10v 1 -10 a i d @t a =70 continuous drain current, v gs @ -10v 1 -8 a i dm pulsed drain current 2 -40 a eas single pulse avalanche energy 3 408 mj i as avalanche current -55.4 a p d @t a =25 total power dissipation 4 1.5 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter 3 typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w 3 r jc thermal resistance junction-case 1 --- 24 /w 3 bvdss rdson id -30v 10.5m
-10a p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data sop8 pin configuration product summery rev a.04 d072011 the UM3015 is the highest performance trench the UM3015 meet the rohs and green product unitpower s o-8 1
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3 p-ch 30v fast switching mosfets 0 5 10 15 20 25 30 35 40 01234 -v ds , drain-to-source voltage (v) -i d drain current (a) v gs =-10v v gs =-7v v gs =-5v v gs =-4.5v v gs =-3v 6 8 10 12 14 246810 -v gs (v) r dson (m
) i d =-10a 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 : t j =25 : 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( : ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( : ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j unitpower UM3015
4 p-ch 30v fast switching mosfets 10 100 1000 10000 15913172125 -v ds , drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 -v ds (v) -i d (a) t a =25 o c single pulse 100ms 100us 1ms 10ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform unitpower UM3015
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